Silicon Device Reliability

This module provides an overview of the general failure mechanisms in integrated circuits and three MOS technology specific reliability mechanisms (i.e., CMOS latchup, gate oxide reliability and hot carrier reliability). A brief introduction on the failure analysis methodology will also be covered. At the end of this module, students will gain a basic understanding of the various failure/reliability issues in silicon devices. Topics covered: Introduction to IC Failure Analysis. General failure mechanisms in integrated circuits: Bonding, packaging and metallization failures. Electrical stress failures: electromigration and ESD/EOS. Technology specific reliability mechanisms: CMOS latchup, gate oxide reliability and hot-carrier reliability.

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