Power Semiconductor Devices & ICs

The module provides a state-of-the-art overview of devices, development and basic understanding of the physics of power semiconductors. The module covers: Carrier physics in power devices: mobility, resistivity, life-time, high-level injection; Breakdown voltage and junction termination: avalanche breakdown, punch-through breakdown; Power devices: power MOSFET for synchronous rectifiers, power diode and recovery phenomena, power transistor and quasi-saturation effects, gate turn-off thyristor, MOS-controlled bipolar device; Smart power ICs: evolution, high-voltage power MOSFETs in integrated circuits, technological limitations in power ICs, protection techniques in power ICs.

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