MLE4207



Growth Aspects Of Semiconductors

Semiconductor surfaces and structures; Aspects of epitaxy in the growth of low dimensional III-V and Si based semiconductor materials; In-situ characterisation techniques and monitoring epitaxial growth by molecular beam epitaxy; Structural, kinematic theory of LEED and application of RHEED; Surface topography, composition and growth modes probed by STM, XPS and Auger spectroscopy; Layer by layer, layer-island and island growth; Problems of sensitivity and selectivity in the study of surfaces and interfaces.

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